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| Advance Product Information November 6, 2001 Ka Band Wideband LNA/Driver TGA1319C-EPU Key Features and Performance * * * * * * 0.15um pHEMT Technology 16-30 GHz Frequency Range 2.25 dB Nominal Noise Figure midband 21 dB Nominal Gain 14 dBm Pout Bias 5V, 60 mA with -0.5V < Vg < +0.5V Chip Dimensions 2.179 mm x .847 mm Primary Applications * * 3 Point-to-Point Radio Point-to-Multipoint Communications 0 -5 2 .5 NF (dB) Input RL (dB) -10 -15 -20 -25 -30 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 2 1 .5 21 2 1 .5 22 2 2 .5 23 2 3 .5 24 2 4 .5 25 2 5 .5 26 Fre q ue n cy Frequency ( GHz) Typical NF @ 25C Typical S11 @ 25C 25 0 -5 Output RL (dB) 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 Frequency ( GHz) 20 -10 -15 -20 -25 -30 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 Frequency ( GHz) Gain (dB) 15 10 5 0 Typical Gain @ 25C Typical S22 @ 25C Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications subject to change without notice TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information November 6, 2001 TGA1319C-EPU MAXIMUM RATINGS SYMBOL V+ I + PARAMETER 4/ POSITIVE SUPPLY VOLTAGE POSITIVE SUPPLY CURRENT NEGATIVE GATE CURRENT INPUT CONTINUOUS WAVE POWER POWER DISSIPATION OPERATING CHANNEL TEMPERATURE MOUNTING TEMPERATURE (30 SECONDS) STORAGE TEMPERATURE VALUE 9V 80 mA 5.28 mA 18 dBm .72 W 150 0C 320 C -65 to 150 0C 0 NOTES 1/ IPIN PD TCH TM TSTG 2/ 3/ 1/ 2/ 3/ Total current for all stages. These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings represent the maximum operable values for the device. DC PROBE TESTS (TA = 25 C 5C) Symbol Idss VP BVGS BVGD Parameter Saturated Drain Current Pinch-off Voltage Breakdown Voltage gate-source Breakdown Voltage gate-drain Minimum ---1.5 ----Maximum ---0.5 ----Value mA V V V 4/ ON-WAFER RF PROBE CHARACTERISTICS (TA = 25 C 5C) Vd = 5 V, Id1 = 10 mA, Id2 = 50 mA Symbol Parameter Gain NF PWR Small Signal Gain Noise Figure Output Power @ P1dB Test Condition F = 21 - 27 GHz F = 21 - 25 GHz F = 26 - 26.5 GHz F = 21 - 26 GHz F = 27 GHz Min 19 ----10 9 Limit Typ Max --2.5 2 ----Units dB dB dBm Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications subject to change without notice TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 2 Advance Product Information November 6, 2001 TGA1319C-EPU RFin RFout Notes:1. Vg1 and Vg2 may be sourced from the same supply. 2. Positive or negative gate bias may be required to achieve recommended operating point. TGA1319C- Recommended Assembly Drawing Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications subject to change without notice TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 3 Advance Product Information November 6, 2001 TGA1319C-EPU Mechanical Drawing Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications subject to change without notice TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 4 Advance Product Information November 6, 2001 TGA1319C-EPU Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C. An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 8 Advance Product Information November 6, 2001 TGA1319C-EPU Assembly Process Notes Reflow process assembly notes: * * * * * AuSn (80/20) solder with limited exposure to temperatures at or above 300C alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere Component placement and adhesive attachment assembly notes: * * * * * * * vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical Interconnect process assembly notes: * * * * * thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200C GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 5 |
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